MRF6S19140HR3 MRF6S19140HSR3
3
RF Device Data
Freescale Semiconductor
Figure 1. MRF6S19140HR3(HSR3) Test Circuit Schematic
Z7 0.115″
x 0.569
″
Microstrip
Z8 0.191″
x 0.289
″
Microstrip
Z9 0.681″
x 0.081
″
Microstrip
Z10 1.140″
x 0.081
″
Microstrip
PCB Arlon GX0300-55-22, 0.030″, εr
= 2.5
Z1 0.864″
x 0.082
″
Microstrip
Z2 1.373″
x 0.082
″
Microstrip
Z3 0.282″
x 0.900
″
Microstrip
Z4 0.103″
x 0.900
″
Microstrip
Z5 0.094″
x 1.055
″
Microstrip
Z6 0.399″
x 1.055
″
Microstrip
RF
INPUT
RF
OUTPUT
C7
DUT
Z1
C1
R3
R1
VBIAS
R5
B1
C13
+
C3
Z2
Z3
VBIAS
C8
R4
R2
R6
B2
C14
+
C4
Z4
Z5
Z6
Z7
C5
C9
C11
C15
+
VSUPPLY
Z8
Z9
C2
Z10
VSUPPLY
C6
C10
C12
Table 5. MRF6S19140HR3(HSR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1, B2
Beads, Surface Mount
2743019447
Fair-Rite
C1, C2
39 pF Chip Capacitors
ATC100B390JT500XT
ATC
C3, C4, C5, C6
9.1 pF Chip Capacitors
ATC100B9R1CT500XT
ATC
C7, C8, C9, C10, C11, C12
10 μF, 50 V Chip Capacitors
GRM55DR61H106KA88B
Murata
C13, C14
47 μF, 50 V Electrolytic Capacitors
EMVY500ADA470MF80G
Nippon
C15
470 μF, 63 V Electrolytic Capacitor
ESMG630ELL471MK205
United Chemi-Con
R1, R2
560 kΩ, 1/4 W Chip Resistors
CRCW12065600FKTA
Vishay
R3, R4
1.0 kΩ, 1/4 W Chip Resistors
CRCW12061001FKTA
Vishay
R5, R6
12 Ω, 1/4 W Chip Resistors
CRCW120612R0FKTA
Vishay
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
MRF6S19200HSR5
MOSFET RF N-CH 56W 28V NI780S
MRF6S20010GNR1
MOSFT RF N-CH 28V 10W TO270-2 GW
MRF6S21050LSR5
MOSFET RF N-CH 28V 11.5W NI-400S
MRF6S21060NR1
MOSFET RF N-CH 28V 14W TO270-4
MRF6S21100HSR5
MOSFET RF N-CHAN 28V 23W NI-780S
MRF6S21100NR1
MOSFET RF N-CH 28V 23W TO270-4
MRF6S21140HSR5
MOSFET RF N-CHAN 28V 30W NI-880S
MRF6S21190HSR5
MOSFET RF N-CH 54W NI880S
相关代理商/技术参数
MRF6S19200H
制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors
MRF6S19200HR3
功能描述:射频MOSFET电源晶体管 HV6 1.9GHZ 56W 28V NI780 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6S19200HR5
功能描述:射频MOSFET电源晶体管 HV6 1.9GHZ 56W 28V NI780 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6S19200HSR3
功能描述:射频MOSFET电源晶体管 HV6 1.9GHZ 56W 28V NI780S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6S19200HSR5
功能描述:射频MOSFET电源晶体管 HV6 1.9GHZ 56W 28V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6S20010GNR1
功能描述:射频MOSFET电源晶体管 HV6 2GHZ 10W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6S20010GNR1-CUT TAPE
制造商:Freescale 功能描述:MRF6S20010 Series 1.6 to 2.2 GHz 28 V 10 W RF Power N-Ch Mosfet - TO-270
MRF6S20010NR1
功能描述:射频MOSFET电源晶体管 HV6 2GHZ 10W TO270-2 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
